Oxidation behaviour of Cu thin films on Si wafer at 175-400°C

Oxidation behaviour of Cu thin films on Si wafer at 175-400°C

10.1016/S0167-577X(01)00268-3

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Bibliographic Details
Main Authors: Gao, W., Gong, H., He, J., Thomas, A., Chan, L., Li, S.
Other Authors: MATERIALS SCIENCE
Format: Article
Published: 2014
Subjects:
Atomic force microscopy (AFM)
Copper
Diffusion
Oxidation
Thin films
Online Access:http://scholarbank.nus.edu.sg/handle/10635/107159
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/107159

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