Oxidation behaviour of Cu thin films on Si wafer at 175-400°C

Oxidation behaviour of Cu thin films on Si wafer at 175-400°C

10.1016/S0167-577X(01)00268-3

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Bibliographic Details
Main Authors: Gao, W., Gong, H., He, J., Thomas, A., Chan, L., Li, S.
Other Authors: MATERIALS SCIENCE
Format: Article
Published: 2014
Subjects:
Atomic force microscopy (AFM)
Copper
Diffusion
Oxidation
Thin films
Online Access:http://scholarbank.nus.edu.sg/handle/10635/107159
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Institution: National University of Singapore
id sg-nus-scholar.10635-107159
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spelling sg-nus-scholar.10635-1071592023-10-25T23:07:51Z Oxidation behaviour of Cu thin films on Si wafer at 175-400°C Gao, W. Gong, H. He, J. Thomas, A. Chan, L. Li, S. MATERIALS SCIENCE Atomic force microscopy (AFM) Copper Diffusion Oxidation Thin films 10.1016/S0167-577X(01)00268-3 Materials Letters 51 1 78-84 MLETD 2014-10-29T08:40:19Z 2014-10-29T08:40:19Z 2001-10 Article Gao, W., Gong, H., He, J., Thomas, A., Chan, L., Li, S. (2001-10). Oxidation behaviour of Cu thin films on Si wafer at 175-400°C. Materials Letters 51 (1) : 78-84. ScholarBank@NUS Repository. https://doi.org/10.1016/S0167-577X(01)00268-3 0167577X http://scholarbank.nus.edu.sg/handle/10635/107159 000171514600014 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Atomic force microscopy (AFM)
Copper
Diffusion
Oxidation
Thin films
spellingShingle Atomic force microscopy (AFM)
Copper
Diffusion
Oxidation
Thin films
Gao, W.
Gong, H.
He, J.
Thomas, A.
Chan, L.
Li, S.
Oxidation behaviour of Cu thin films on Si wafer at 175-400°C
description 10.1016/S0167-577X(01)00268-3
author2 MATERIALS SCIENCE
author_facet MATERIALS SCIENCE
Gao, W.
Gong, H.
He, J.
Thomas, A.
Chan, L.
Li, S.
format Article
author Gao, W.
Gong, H.
He, J.
Thomas, A.
Chan, L.
Li, S.
author_sort Gao, W.
title Oxidation behaviour of Cu thin films on Si wafer at 175-400°C
title_short Oxidation behaviour of Cu thin films on Si wafer at 175-400°C
title_full Oxidation behaviour of Cu thin films on Si wafer at 175-400°C
title_fullStr Oxidation behaviour of Cu thin films on Si wafer at 175-400°C
title_full_unstemmed Oxidation behaviour of Cu thin films on Si wafer at 175-400°C
title_sort oxidation behaviour of cu thin films on si wafer at 175-400°c
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/107159
_version_ 1781788347290615808

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