Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiC

10.1002/sia.1411

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Bibliographic Details
Main Authors:	Chang, W., Feng, Z.C., Lin, J., Liu, R., Wee, A.T.S., Tone, K., Zhao, J.H.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Subjects:	6H-SiC Annealing FTIR Ion implantation
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/113083
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Institution:	National University of Singapore

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