Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface

10.1016/S0022-0248(02)02219-4

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Bibliographic Details
Main Authors:	Price, R.W., Tok, E.S., Liu, R., Wee, A.T.S., Woods, N.J., Zhang, J.
Other Authors:	INSTITUTE OF ENGINEERING SCIENCE
Format:	Conference or Workshop Item
Published:	2014
Subjects:	A1. Adsorption A1. Segregation A3. Molecular beam epitaxy B1. Germanium silicon alloys B2. Semiconducting silicon compounds B3. Heterojunction semiconductor device
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/113113
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-113113
record_format	dspace
spelling	sg-nus-scholar.10635-1131132024-11-15T07:05:18Z Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface Price, R.W. Tok, E.S. Liu, R. Wee, A.T.S. Woods, N.J. Zhang, J. INSTITUTE OF ENGINEERING SCIENCE PHYSICS MATERIALS SCIENCE A1. Adsorption A1. Segregation A3. Molecular beam epitaxy B1. Germanium silicon alloys B2. Semiconducting silicon compounds B3. Heterojunction semiconductor device 10.1016/S0022-0248(02)02219-4 Journal of Crystal Growth 251 1-4 676-680 JCRGA 2014-11-28T09:12:10Z 2014-11-28T09:12:10Z 2003-04 Conference Paper Price, R.W., Tok, E.S., Liu, R., Wee, A.T.S., Woods, N.J., Zhang, J. (2003-04). Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface. Journal of Crystal Growth 251 (1-4) : 676-680. ScholarBank@NUS Repository. https://doi.org/10.1016/S0022-0248(02)02219-4 00220248 http://scholarbank.nus.edu.sg/handle/10635/113113 000182179800126 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	A1. Adsorption A1. Segregation A3. Molecular beam epitaxy B1. Germanium silicon alloys B2. Semiconducting silicon compounds B3. Heterojunction semiconductor device
spellingShingle	A1. Adsorption A1. Segregation A3. Molecular beam epitaxy B1. Germanium silicon alloys B2. Semiconducting silicon compounds B3. Heterojunction semiconductor device Price, R.W. Tok, E.S. Liu, R. Wee, A.T.S. Woods, N.J. Zhang, J. Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface
description	10.1016/S0022-0248(02)02219-4
author2	INSTITUTE OF ENGINEERING SCIENCE
author_facet	INSTITUTE OF ENGINEERING SCIENCE Price, R.W. Tok, E.S. Liu, R. Wee, A.T.S. Woods, N.J. Zhang, J.
format	Conference or Workshop Item
author	Price, R.W. Tok, E.S. Liu, R. Wee, A.T.S. Woods, N.J. Zhang, J.
author_sort	Price, R.W.
title	Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface
title_short	Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface
title_full	Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface
title_fullStr	Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface
title_full_unstemmed	Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface
title_sort	dynamics and surface segregation during gsmbe of si1-ycy and si1-x-ygexcy on the si(0 0 1) surface
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/113113
_version_	1821224814884421632

Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface

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