Plasma deposition of low dielectric constant (κ=2.2-2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films

Plasma deposition of low dielectric constant (κ=2.2-2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films

10.1063/1.1808909

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Bibliographic Details
Main Authors: Jun, L., Kian, P.L., Ming, L., Yong, L.F., Wei, D.W., Dong, Z.C.
Other Authors: CHEMICAL AND PROCESS ENGINEERING CENTRE
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/113204
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Institution: National University of Singapore
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Summary:10.1063/1.1808909

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