Plasma deposition of low dielectric constant (κ=2.2-2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films
10.1063/1.1808909
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Main Authors: | Jun, L., Kian, P.L., Ming, L., Yong, L.F., Wei, D.W., Dong, Z.C. |
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Other Authors: | CHEMICAL AND PROCESS ENGINEERING CENTRE |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/113204 |
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Institution: | National University of Singapore |
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