Plasma deposition of low dielectric constant (κ=2.2-2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films
10.1063/1.1808909
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sg-nus-scholar.10635-1132042023-10-25T22:09:00Z Plasma deposition of low dielectric constant (κ=2.2-2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films Jun, L. Kian, P.L. Ming, L. Yong, L.F. Wei, D.W. Dong, Z.C. CHEMICAL AND PROCESS ENGINEERING CENTRE CHEMISTRY 10.1063/1.1808909 Journal of Applied Physics 96 11 6679-6684 JAPIA 2014-11-30T06:40:57Z 2014-11-30T06:40:57Z 2004-12-01 Article Jun, L., Kian, P.L., Ming, L., Yong, L.F., Wei, D.W., Dong, Z.C. (2004-12-01). Plasma deposition of low dielectric constant (κ=2.2-2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films. Journal of Applied Physics 96 (11) : 6679-6684. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1808909 00218979 http://scholarbank.nus.edu.sg/handle/10635/113204 000225300800113 Scopus |
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Singapore Singapore |
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10.1063/1.1808909 |
| author2 |
CHEMICAL AND PROCESS ENGINEERING CENTRE |
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CHEMICAL AND PROCESS ENGINEERING CENTRE Jun, L. Kian, P.L. Ming, L. Yong, L.F. Wei, D.W. Dong, Z.C. |
| format |
Article |
| author |
Jun, L. Kian, P.L. Ming, L. Yong, L.F. Wei, D.W. Dong, Z.C. |
| spellingShingle |
Jun, L. Kian, P.L. Ming, L. Yong, L.F. Wei, D.W. Dong, Z.C. Plasma deposition of low dielectric constant (κ=2.2-2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films |
| author_sort |
Jun, L. |
| title |
Plasma deposition of low dielectric constant (κ=2.2-2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films |
| title_short |
Plasma deposition of low dielectric constant (κ=2.2-2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films |
| title_full |
Plasma deposition of low dielectric constant (κ=2.2-2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films |
| title_fullStr |
Plasma deposition of low dielectric constant (κ=2.2-2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films |
| title_full_unstemmed |
Plasma deposition of low dielectric constant (κ=2.2-2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films |
| title_sort |
plasma deposition of low dielectric constant (κ=2.2-2.4) boron nitride on methylsilsesquioxane-based nanoporous films |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/113204 |
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