Plasma deposition of low dielectric constant (κ=2.2-2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films

• Main Authors: Jun, L., Kian, P.L., Ming, L., Yong, L.F., Wei, D.W., Dong, Z.C.
• Other Authors: CHEMICAL AND PROCESS ENGINEERING CENTRE
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/113204
• Institution: National University of Singapore

10.1063/1.1808909