MOS characteristics of substituted Al gate on high-κ dielectric

IEEE Electron Device Letters

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Bibliographic Details
Main Authors: Park, C.S., Cho, B.J., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82722
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Institution: National University of Singapore