The effect of intrinsic defects on resistive switching based on p-n heterojunction

The effect of intrinsic defects on resistive switching based on p-n heterojunction

10.1109/INEC.2013.6466003

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Bibliographic Details
Main Authors: Zheng, K., Sun, X.W., Teo, K.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/114588
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Institution: National University of Singapore
Description
Summary:10.1109/INEC.2013.6466003

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