Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study
10.1063/1.1509100
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sg-nus-scholar.10635-1160182023-10-30T10:11:50Z Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study Xie, X. Loh, K.P. CHEMISTRY NUS NANOSCIENCE & NANOTECH INITIATIVE 10.1063/1.1509100 Journal of Applied Physics 92 9 5173-5176 JAPIA 2014-12-12T07:35:22Z 2014-12-12T07:35:22Z 2002-11-01 Article Xie, X., Loh, K.P. (2002-11-01). Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study. Journal of Applied Physics 92 (9) : 5173-5176. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1509100 00218979 http://scholarbank.nus.edu.sg/handle/10635/116018 000178767200047 Scopus |
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10.1063/1.1509100 |
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CHEMISTRY Xie, X. Loh, K.P. |
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Xie, X. Loh, K.P. |
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Xie, X. Loh, K.P. Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study |
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Xie, X. |
title |
Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study |
title_short |
Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study |
title_full |
Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study |
title_fullStr |
Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study |
title_full_unstemmed |
Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study |
title_sort |
ultrathin oxide interfaces on 6h-sic formed by plasma hydrogenation: ultra shallow depth profile study |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/116018 |
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