1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy

10.1016/j.tsf.2006.07.122

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Bibliographic Details
Main Authors:	Cheah, W.K., Fan, W.J., Yoon, S.F., Zhang, D.H., Ng, B.K., Loke, W.K., Liu, R., Wee, A.T.S.
Other Authors:	INSTITUTE OF ENGINEERING SCIENCE
Format:	Article
Published:	2014
Subjects:	Dilute nitride Epitaxy Photodetector
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/116185
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-116185
record_format	dspace
spelling	sg-nus-scholar.10635-1161852024-11-12T21:14:32Z 1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy Cheah, W.K. Fan, W.J. Yoon, S.F. Zhang, D.H. Ng, B.K. Loke, W.K. Liu, R. Wee, A.T.S. INSTITUTE OF ENGINEERING SCIENCE PHYSICS Dilute nitride Epitaxy Photodetector 10.1016/j.tsf.2006.07.122 Thin Solid Films 515 10 4441-4444 THSFA 2014-12-12T07:46:46Z 2014-12-12T07:46:46Z 2007-03-26 Article Cheah, W.K., Fan, W.J., Yoon, S.F., Zhang, D.H., Ng, B.K., Loke, W.K., Liu, R., Wee, A.T.S. (2007-03-26). 1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy. Thin Solid Films 515 (10) : 4441-4444. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.122 00406090 http://scholarbank.nus.edu.sg/handle/10635/116185 000245167000030 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Dilute nitride Epitaxy Photodetector
spellingShingle	Dilute nitride Epitaxy Photodetector Cheah, W.K. Fan, W.J. Yoon, S.F. Zhang, D.H. Ng, B.K. Loke, W.K. Liu, R. Wee, A.T.S. 1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy
description	10.1016/j.tsf.2006.07.122
author2	INSTITUTE OF ENGINEERING SCIENCE
author_facet	INSTITUTE OF ENGINEERING SCIENCE Cheah, W.K. Fan, W.J. Yoon, S.F. Zhang, D.H. Ng, B.K. Loke, W.K. Liu, R. Wee, A.T.S.
format	Article
author	Cheah, W.K. Fan, W.J. Yoon, S.F. Zhang, D.H. Ng, B.K. Loke, W.K. Liu, R. Wee, A.T.S.
author_sort	Cheah, W.K.
title	1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy
title_short	1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy
title_full	1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy
title_fullStr	1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy
title_full_unstemmed	1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy
title_sort	1.31 μm gaas-based heterojunction p-i-n photodetectors using ingaasnsb as the intrinsic layer grown by molecular beam epitaxy
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/116185
_version_	1821184843183030272

1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy

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