1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy

1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy

10.1016/j.tsf.2006.07.122

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Bibliographic Details
Main Authors: Cheah, W.K., Fan, W.J., Yoon, S.F., Zhang, D.H., Ng, B.K., Loke, W.K., Liu, R., Wee, A.T.S.
Other Authors: INSTITUTE OF ENGINEERING SCIENCE
Format: Article
Published: 2014
Subjects:
Dilute nitride
Epitaxy
Photodetector
Online Access:http://scholarbank.nus.edu.sg/handle/10635/116185
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Institution: National University of Singapore
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