IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING

Ph.D

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Bibliographic Details
Main Author:	CHEN ZHIXIAN
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2016
Subjects:	Resistive RAM (RRAM), vertical silicon nanowire FET, low current switching, HfO2-based, atomic layer deposition (ALD), nickel-silicide, large reset
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/123866
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-123866
record_format	dspace
spelling	sg-nus-scholar.10635-1238662017-02-01T19:52:08Z IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING CHEN ZHIXIAN ELECTRICAL & COMPUTER ENGINEERING WU YIHONG Resistive RAM (RRAM), vertical silicon nanowire FET, low current switching, HfO2-based, atomic layer deposition (ALD), nickel-silicide, large reset Ph.D DOCTOR OF PHILOSOPHY 2016-05-12T18:00:15Z 2016-05-12T18:00:15Z 2016-01-14 Thesis CHEN ZHIXIAN (2016-01-14). IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/123866 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	Resistive RAM (RRAM), vertical silicon nanowire FET, low current switching, HfO2-based, atomic layer deposition (ALD), nickel-silicide, large reset
spellingShingle	Resistive RAM (RRAM), vertical silicon nanowire FET, low current switching, HfO2-based, atomic layer deposition (ALD), nickel-silicide, large reset CHEN ZHIXIAN IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING CHEN ZHIXIAN
format	Theses and Dissertations
author	CHEN ZHIXIAN
author_sort	CHEN ZHIXIAN
title	IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING
title_short	IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING
title_full	IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING
title_fullStr	IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING
title_full_unstemmed	IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING
title_sort	improving the hafnia-based resistive random-access memory through materal engineering
publishDate	2016
url	http://scholarbank.nus.edu.sg/handle/10635/123866
_version_	1681095970251603968

IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING

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