IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING

Ph.D

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Bibliographic Details
Main Author: CHEN ZHIXIAN
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Theses and Dissertations
Language:English
Published: 2016
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/123866
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Institution: National University of Singapore
Language: English

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