Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs

10.1109/TED.2014.2352276

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Main Authors:	Chang, T.-F., Hsiao, T.-C., Huang, C.-F., Kuo, W.-H., Lin, S.-F., Samudra, G.S., Liang Y.C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	Institute of Electrical and Electronics Engineers Inc. 2016
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/127347
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-1273472023-10-25T22:32:07Z Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs Chang, T.-F. Hsiao, T.-C. Huang, C.-F. Kuo, W.-H. Lin, S.-F. Samudra, G.S. Liang Y.C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/TED.2014.2352276 IEEE Transactions on Electron Devices 62 2 339-345 2016-09-09T00:49:59Z 2016-09-09T00:49:59Z 2015 Article Chang, T.-F., Hsiao, T.-C., Huang, C.-F., Kuo, W.-H., Lin, S.-F., Samudra, G.S., Liang Y.C. (2015). Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices 62 (2) : 339-345. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2014.2352276 189383 http://scholarbank.nus.edu.sg/handle/10635/127347 000348386100013 Institute of Electrical and Electronics Engineers Inc.
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/TED.2014.2352276
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chang, T.-F. Hsiao, T.-C. Huang, C.-F. Kuo, W.-H. Lin, S.-F. Samudra, G.S. Liang Y.C.
format	Article
author	Chang, T.-F. Hsiao, T.-C. Huang, C.-F. Kuo, W.-H. Lin, S.-F. Samudra, G.S. Liang Y.C.
spellingShingle	Chang, T.-F. Hsiao, T.-C. Huang, C.-F. Kuo, W.-H. Lin, S.-F. Samudra, G.S. Liang Y.C. Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
author_sort	Chang, T.-F.
title	Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
title_short	Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
title_full	Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
title_fullStr	Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
title_full_unstemmed	Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
title_sort	phenomenon of drain current instability on p-gan gate algan/gan hemts
publisher	Institute of Electrical and Electronics Engineers Inc.
publishDate	2016
url	http://scholarbank.nus.edu.sg/handle/10635/127347
_version_	1781790350366474240

Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs

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