Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs

• Main Authors: Chang, T.-F., Hsiao, T.-C., Huang, C.-F., Kuo, W.-H., Lin, S.-F., Samudra, G.S., Liang Y.C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: Institute of Electrical and Electronics Engineers Inc. 2016
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/127347
• Institution: National University of Singapore

10.1109/TED.2014.2352276