Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor

Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor

10.1109/TED.2014.2387194

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Bibliographic Details
Main Authors: Guo Y., Zhang, X., Low, K. L., Lam, K.-T., Yeo Y.-C., Liang, G.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: Institute of Electrical and Electronics Engineers Inc. 2016
Online Access:http://scholarbank.nus.edu.sg/handle/10635/127349
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2014.2387194

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