Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor
10.1109/TED.2014.2387194
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Institute of Electrical and Electronics Engineers Inc.
2016
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sg-nus-scholar.10635-1273492023-10-30T22:47:54Z Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor Guo Y. Zhang, X. Low, K. L. Lam, K.-T. Yeo Y.-C. Liang, G. ELECTRICAL & COMPUTER ENGINEERING 10.1109/TED.2014.2387194 IEEE Transactions on Electron Devices 62 3 788-794 2016-09-09T00:50:02Z 2016-09-09T00:50:02Z 2015 Article Guo Y., Zhang, X., Low, K. L., Lam, K.-T., Yeo Y.-C., Liang, G. (2015). Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor. IEEE Transactions on Electron Devices 62 (3) : 788-794. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2014.2387194 189383 http://scholarbank.nus.edu.sg/handle/10635/127349 000350332000015 Institute of Electrical and Electronics Engineers Inc. |
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Asia |
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Singapore Singapore |
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| description |
10.1109/TED.2014.2387194 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Guo Y. Zhang, X. Low, K. L. Lam, K.-T. Yeo Y.-C. Liang, G. |
| format |
Article |
| author |
Guo Y. Zhang, X. Low, K. L. Lam, K.-T. Yeo Y.-C. Liang, G. |
| spellingShingle |
Guo Y. Zhang, X. Low, K. L. Lam, K.-T. Yeo Y.-C. Liang, G. Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor |
| author_sort |
Guo Y. |
| title |
Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor |
| title_short |
Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor |
| title_full |
Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor |
| title_fullStr |
Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor |
| title_full_unstemmed |
Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor |
| title_sort |
effect of body thickness on the electrical performance of ballistic n-channel gasb double-gate ultrathin-body transistor |
| publisher |
Institute of Electrical and Electronics Engineers Inc. |
| publishDate |
2016 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/127349 |
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1781790350931656704 |