Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor
10.1109/TED.2014.2387194
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Main Authors: | Guo Y., Zhang, X., Low, K. L., Lam, K.-T., Yeo Y.-C., Liang, G. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
Institute of Electrical and Electronics Engineers Inc.
2016
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/127349 |
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Institution: | National University of Singapore |
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