Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor

• Main Authors: Guo Y., Zhang, X., Low, K. L., Lam, K.-T., Yeo Y.-C., Liang, G.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: Institute of Electrical and Electronics Engineers Inc. 2016
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/127349
• Institution: National University of Singapore

10.1109/TED.2014.2387194