Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application
10.1016/j.matlet.2015.05.001
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2016
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sg-nus-scholar.10635-1276122023-10-27T08:58:05Z Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application Kumar G.D. Chakraborty S. Mahata C. Amin Bhuiyan M. Dong J. Iskander A. Masudy-Panah S. Dinda S. Bin Yang R. Lee T. Chi D. Kean Chia C. SOLAR ENERGY RESEARCH INST OF S'PORE 10.1016/j.matlet.2015.05.001 Materials Letters 156 105-108 2016-09-09T01:03:38Z 2016-09-09T01:03:38Z 2015 Article Kumar G.D., Chakraborty S., Mahata C., Amin Bhuiyan M., Dong J., Iskander A., Masudy-Panah S., Dinda S., Bin Yang R., Lee T., Chi D., Kean Chia C. (2015). Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application. Materials Letters 156 : 105-108. ScholarBank@NUS Repository. https://doi.org/10.1016/j.matlet.2015.05.001 0167577X http://scholarbank.nus.edu.sg/handle/10635/127612 000357550300029 Elsevier |
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10.1016/j.matlet.2015.05.001 |
| author2 |
SOLAR ENERGY RESEARCH INST OF S'PORE |
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SOLAR ENERGY RESEARCH INST OF S'PORE Kumar G.D. Chakraborty S. Mahata C. Amin Bhuiyan M. Dong J. Iskander A. Masudy-Panah S. Dinda S. Bin Yang R. Lee T. Chi D. Kean Chia C. |
| format |
Article |
| author |
Kumar G.D. Chakraborty S. Mahata C. Amin Bhuiyan M. Dong J. Iskander A. Masudy-Panah S. Dinda S. Bin Yang R. Lee T. Chi D. Kean Chia C. |
| spellingShingle |
Kumar G.D. Chakraborty S. Mahata C. Amin Bhuiyan M. Dong J. Iskander A. Masudy-Panah S. Dinda S. Bin Yang R. Lee T. Chi D. Kean Chia C. Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application |
| author_sort |
Kumar G.D. |
| title |
Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application |
| title_short |
Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application |
| title_full |
Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application |
| title_fullStr |
Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application |
| title_full_unstemmed |
Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application |
| title_sort |
atomic layer deposited al2o3 on high quality p-type epitaxial-gaas/ge for advanced iii-v/ge based device application |
| publisher |
Elsevier |
| publishDate |
2016 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/127612 |
| _version_ |
1781790421233434624 |