Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application

Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application

10.1016/j.matlet.2015.05.001

Saved in:
Bibliographic Details
Main Authors: Kumar G.D., Chakraborty S., Mahata C., Amin Bhuiyan M., Dong J., Iskander A., Masudy-Panah S., Dinda S., Bin Yang R., Lee T., Chi D., Kean Chia C.
Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
Format: Article
Published: Elsevier 2016
Online Access:http://scholarbank.nus.edu.sg/handle/10635/127612
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/127612

Similar Items