Atomic layer deposited hafnium-based gate dielectrics for deep sub-micron CMOS technology

Atomic layer deposited hafnium-based gate dielectrics for deep sub-micron CMOS technology

Master's

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Bibliographic Details
Main Author: HO MUN YEE
Other Authors: MATERIALS SCIENCE
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
Hafinium, Atomic layer depostion, Aluminates, fixed charge, gate oxide, flatband shift
Online Access:http://scholarbank.nus.edu.sg/handle/10635/13447
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Institution: National University of Singapore
Language: English

Internet

http://scholarbank.nus.edu.sg/handle/10635/13447

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