Atomic layer deposited hafnium-based gate dielectrics for deep sub-micron CMOS technology

Master's

Saved in:

Bibliographic Details
Main Author:	HO MUN YEE
Other Authors:	MATERIALS SCIENCE
Format:	Theses and Dissertations
Language:	English
Published:	2010
Subjects:	Hafinium, Atomic layer depostion, Aluminates, fixed charge, gate oxide, flatband shift
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/13447
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-13447
record_format	dspace
spelling	sg-nus-scholar.10635-134472015-01-07T10:44:55Z Atomic layer deposited hafnium-based gate dielectrics for deep sub-micron CMOS technology HO MUN YEE MATERIALS SCIENCE MICHAEL LOOMANS Hafinium, Atomic layer depostion, Aluminates, fixed charge, gate oxide, flatband shift Master's MASTER OF SCIENCE 2010-04-08T10:33:04Z 2010-04-08T10:33:04Z 2004-01-12 Thesis HO MUN YEE (2004-01-12). Atomic layer deposited hafnium-based gate dielectrics for deep sub-micron CMOS technology. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/13447 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	Hafinium, Atomic layer depostion, Aluminates, fixed charge, gate oxide, flatband shift
spellingShingle	Hafinium, Atomic layer depostion, Aluminates, fixed charge, gate oxide, flatband shift HO MUN YEE Atomic layer deposited hafnium-based gate dielectrics for deep sub-micron CMOS technology
description	Master's
author2	MATERIALS SCIENCE
author_facet	MATERIALS SCIENCE HO MUN YEE
format	Theses and Dissertations
author	HO MUN YEE
author_sort	HO MUN YEE
title	Atomic layer deposited hafnium-based gate dielectrics for deep sub-micron CMOS technology
title_short	Atomic layer deposited hafnium-based gate dielectrics for deep sub-micron CMOS technology
title_full	Atomic layer deposited hafnium-based gate dielectrics for deep sub-micron CMOS technology
title_fullStr	Atomic layer deposited hafnium-based gate dielectrics for deep sub-micron CMOS technology
title_full_unstemmed	Atomic layer deposited hafnium-based gate dielectrics for deep sub-micron CMOS technology
title_sort	atomic layer deposited hafnium-based gate dielectrics for deep sub-micron cmos technology
publishDate	2010
url	http://scholarbank.nus.edu.sg/handle/10635/13447
_version_	1681078859395497984

Atomic layer deposited hafnium-based gate dielectrics for deep sub-micron CMOS technology

Similar Items