Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide

Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide

10.1155/2014/752967

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Bibliographic Details
Main Authors: Ge J., Tang M., Wong J., Zhang Z., Dippell T., Doerr M., Hohn O., Huber M., Wohlfart P., Aberle A.G., Mueller T.
Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
Format: Article
Published: Hindawi Publishing Corporation 2018
Online Access:http://scholarbank.nus.edu.sg/handle/10635/145992
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Institution: National University of Singapore
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Summary:10.1155/2014/752967

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