Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide
10.1155/2014/752967
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Main Authors: | Ge J., Tang M., Wong J., Zhang Z., Dippell T., Doerr M., Hohn O., Huber M., Wohlfart P., Aberle A.G., Mueller T. |
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Other Authors: | DEPT OF ELECTRICAL & COMPUTER ENGG |
Format: | Article |
Published: |
Hindawi Publishing Corporation
2018
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/145992 |
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Institution: | National University of Singapore |
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