Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide

Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide

10.1155/2014/752967

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Bibliographic Details
Main Authors: Ge J., Tang M., Wong J., Zhang Z., Dippell T., Doerr M., Hohn O., Huber M., Wohlfart P., Aberle A.G., Mueller T.
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: Hindawi Publishing Corporation 2018
Online Access:http://scholarbank.nus.edu.sg/handle/10635/145992
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Institution: National University of Singapore
id sg-nus-scholar.10635-145992
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spelling sg-nus-scholar.10635-1459922024-11-12T21:35:16Z Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide Ge J. Tang M. Wong J. Zhang Z. Dippell T. Doerr M. Hohn O. Huber M. Wohlfart P. Aberle A.G. Mueller T. ELECTRICAL AND COMPUTER ENGINEERING 10.1155/2014/752967 International Journal of Photoenergy 2014 752967 2018-08-20T02:35:45Z 2018-08-20T02:35:45Z 2014 Article Ge J., Tang M., Wong J., Zhang Z., Dippell T., Doerr M., Hohn O., Huber M., Wohlfart P., Aberle A.G., Mueller T. (2014). Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide. International Journal of Photoenergy 2014 : 752967. ScholarBank@NUS Repository. https://doi.org/10.1155/2014/752967 1110662X http://scholarbank.nus.edu.sg/handle/10635/145992 Hindawi Publishing Corporation Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1155/2014/752967
author2 ELECTRICAL AND COMPUTER ENGINEERING
author_facet ELECTRICAL AND COMPUTER ENGINEERING
Ge J.
Tang M.
Wong J.
Zhang Z.
Dippell T.
Doerr M.
Hohn O.
Huber M.
Wohlfart P.
Aberle A.G.
Mueller T.
format Article
author Ge J.
Tang M.
Wong J.
Zhang Z.
Dippell T.
Doerr M.
Hohn O.
Huber M.
Wohlfart P.
Aberle A.G.
Mueller T.
spellingShingle Ge J.
Tang M.
Wong J.
Zhang Z.
Dippell T.
Doerr M.
Hohn O.
Huber M.
Wohlfart P.
Aberle A.G.
Mueller T.
Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide
author_sort Ge J.
title Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide
title_short Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide
title_full Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide
title_fullStr Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide
title_full_unstemmed Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide
title_sort excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide
publisher Hindawi Publishing Corporation
publishDate 2018
url http://scholarbank.nus.edu.sg/handle/10635/145992
_version_ 1821209913791086592

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