Impact ionization by hot carriers in a black phosphorus field effect transistor

Impact ionization by hot carriers in a black phosphorus field effect transistor

10.1038/s41467-018-05981-0

Saved in:
Bibliographic Details
Main Authors: Ahmed F., Kim Y.D., Yang Z., He P., Hwang E., Yang H., Hone J., Yoo W.J.
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: Nature Publishing Group 2019
Online Access:http://scholarbank.nus.edu.sg/handle/10635/152072
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/152072

Similar Items