Impact ionization by hot carriers in a black phosphorus field effect transistor

Impact ionization by hot carriers in a black phosphorus field effect transistor

10.1038/s41467-018-05981-0

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Bibliographic Details
Main Authors:	Ahmed F., Kim Y.D., Yang Z., He P., Hwang E., Yang H., Hone J., Yoo W.J.
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	Nature Publishing Group 2019
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/152072
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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