Application of ion implantation to the fabrication of GAN-based devices
Ph.D
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2010
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sg-nus-scholar.10635-153582024-10-26T01:58:12Z Application of ion implantation to the fabrication of GAN-based devices WANG HAITING ELECTRICAL & COMPUTER ENGINEERING TAN LENG SEOW CHOR ENG FONG implantation, activation, beryllium, AlGaN/GaN HEMTs, current drive, gate control. Ph.D DOCTOR OF PHILOSOPHY 2010-04-08T10:52:41Z 2010-04-08T10:52:41Z 2006-06-16 Thesis WANG HAITING (2006-06-16). Application of ion implantation to the fabrication of GAN-based devices. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/15358 NOT_IN_WOS en |
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implantation, activation, beryllium, AlGaN/GaN HEMTs, current drive, gate control. |
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implantation, activation, beryllium, AlGaN/GaN HEMTs, current drive, gate control. WANG HAITING Application of ion implantation to the fabrication of GAN-based devices |
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Ph.D |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING WANG HAITING |
format |
Theses and Dissertations |
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WANG HAITING |
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WANG HAITING |
title |
Application of ion implantation to the fabrication of GAN-based devices |
title_short |
Application of ion implantation to the fabrication of GAN-based devices |
title_full |
Application of ion implantation to the fabrication of GAN-based devices |
title_fullStr |
Application of ion implantation to the fabrication of GAN-based devices |
title_full_unstemmed |
Application of ion implantation to the fabrication of GAN-based devices |
title_sort |
application of ion implantation to the fabrication of gan-based devices |
publishDate |
2010 |
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http://scholarbank.nus.edu.sg/handle/10635/15358 |
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