Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

• المؤلفون الرئيسيون: Xin, Zheng, Ling, Zhi Peng, Nandakumar, Naomi, Kaur, Gurleen, Ke, Cangming, Liao, Baochen, Aberle, Armin G, Stangl, Rolf
• مؤلفون آخرون: ELECTRICAL AND COMPUTER ENGINEERING
• التنسيق: مقال
• اللغة: English
• منشور في: IOP PUBLISHING LTD 2019
• الموضوعات: Science & Technology; Physical Sciences; Physics, Applied; Physics; SOLAR-CELL PASSIVATION; N-TYPE; C-SI; AL2O3; SILICON; RECOMBINATION
• الوصول للمادة أونلاين: https://scholarbank.nus.edu.sg/handle/10635/155043

10.7567/JJAP.56.08MB14