Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

10.7567/JJAP.56.08MB14

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Bibliographic Details
Main Authors:	Xin, Zheng, Ling, Zhi Peng, Nandakumar, Naomi, Kaur, Gurleen, Ke, Cangming, Liao, Baochen, Aberle, Armin G, Stangl, Rolf
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Article
Language:	English
Published:	IOP PUBLISHING LTD 2019
Subjects:	Science & Technology Physical Sciences Physics, Applied Physics SOLAR-CELL PASSIVATION N-TYPE C-SI AL2O3 SILICON RECOMBINATION
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/155043
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-155043
record_format	dspace
spelling	sg-nus-scholar.10635-1550432023-09-08T09:17:15Z Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts Xin, Zheng Ling, Zhi Peng Nandakumar, Naomi Kaur, Gurleen Ke, Cangming Liao, Baochen Aberle, Armin G Stangl, Rolf DEPT OF ELECTRICAL & COMPUTER ENGG SOLAR ENERGY RESEARCH INST OF S'PORE Science & Technology Physical Sciences Physics, Applied Physics SOLAR-CELL PASSIVATION N-TYPE C-SI AL2O3 SILICON RECOMBINATION 10.7567/JJAP.56.08MB14 JAPANESE JOURNAL OF APPLIED PHYSICS 56 8 2019-06-03T04:32:52Z 2019-06-03T04:32:52Z 2017-08-01 2019-06-03T01:37:57Z Article Xin, Zheng, Ling, Zhi Peng, Nandakumar, Naomi, Kaur, Gurleen, Ke, Cangming, Liao, Baochen, Aberle, Armin G, Stangl, Rolf (2017-08-01). Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts. JAPANESE JOURNAL OF APPLIED PHYSICS 56 (8). ScholarBank@NUS Repository. https://doi.org/10.7567/JJAP.56.08MB14 0021-4922 1347-4065 https://scholarbank.nus.edu.sg/handle/10635/155043 en IOP PUBLISHING LTD Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Science & Technology Physical Sciences Physics, Applied Physics SOLAR-CELL PASSIVATION N-TYPE C-SI AL2O3 SILICON RECOMBINATION
spellingShingle	Science & Technology Physical Sciences Physics, Applied Physics SOLAR-CELL PASSIVATION N-TYPE C-SI AL2O3 SILICON RECOMBINATION Xin, Zheng Ling, Zhi Peng Nandakumar, Naomi Kaur, Gurleen Ke, Cangming Liao, Baochen Aberle, Armin G Stangl, Rolf Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts
description	10.7567/JJAP.56.08MB14
author2	DEPT OF ELECTRICAL & COMPUTER ENGG
author_facet	DEPT OF ELECTRICAL & COMPUTER ENGG Xin, Zheng Ling, Zhi Peng Nandakumar, Naomi Kaur, Gurleen Ke, Cangming Liao, Baochen Aberle, Armin G Stangl, Rolf
format	Article
author	Xin, Zheng Ling, Zhi Peng Nandakumar, Naomi Kaur, Gurleen Ke, Cangming Liao, Baochen Aberle, Armin G Stangl, Rolf
author_sort	Xin, Zheng
title	Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts
title_short	Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts
title_full	Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts
title_fullStr	Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts
title_full_unstemmed	Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts
title_sort	surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts
publisher	IOP PUBLISHING LTD
publishDate	2019
url	https://scholarbank.nus.edu.sg/handle/10635/155043
_version_	1778169052868378624

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

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