Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies

Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies

10.1109/JETCAS.2016.2547698

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Bibliographic Details
Main Authors:	Jaiswal, Akhilesh, Fong, Xuanyao, Roy, Kaushik
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:	Science & Technology Technology Engineering, Electrical & Electronic Engineering Dual-pillar magnetic tunnel junction (MTJ) Landau-Lifshitz-Gilbert (LLG) readability scaling spin-orbit-torque magnetic tunnel junction (SOT-MTJ) spin transfer torque based magnetic memories (STT-MRAMs) writability SPIN-TRANSFER-TORQUE TUNNEL-JUNCTIONS MAGNETORESISTANCE
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/156166
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Institution:	National University of Singapore
Language:	English

Description
Summary:	10.1109/JETCAS.2016.2547698