Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies

10.1109/JETCAS.2016.2547698

Saved in:

Bibliographic Details
Main Authors:	Jaiswal, Akhilesh, Fong, Xuanyao, Roy, Kaushik
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:	Science & Technology Technology Engineering, Electrical & Electronic Engineering Dual-pillar magnetic tunnel junction (MTJ) Landau-Lifshitz-Gilbert (LLG) readability scaling spin-orbit-torque magnetic tunnel junction (SOT-MTJ) spin transfer torque based magnetic memories (STT-MRAMs) writability SPIN-TRANSFER-TORQUE TUNNEL-JUNCTIONS MAGNETORESISTANCE
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/156166
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-156166
record_format	dspace
spelling	sg-nus-scholar.10635-1561662023-09-21T08:45:09Z Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies Jaiswal, Akhilesh Fong, Xuanyao Roy, Kaushik DEPT OF ELECTRICAL & COMPUTER ENGG Science & Technology Technology Engineering, Electrical & Electronic Engineering Dual-pillar magnetic tunnel junction (MTJ) Landau-Lifshitz-Gilbert (LLG) readability scaling spin-orbit-torque magnetic tunnel junction (SOT-MTJ) spin transfer torque based magnetic memories (STT-MRAMs) writability SPIN-TRANSFER-TORQUE TUNNEL-JUNCTIONS MAGNETORESISTANCE 10.1109/JETCAS.2016.2547698 IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS 6 2 120-133 2019-07-03T02:50:23Z 2019-07-03T02:50:23Z 2016-06-01 2019-07-03T02:43:31Z Article Jaiswal, Akhilesh, Fong, Xuanyao, Roy, Kaushik (2016-06-01). Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies. IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS 6 (2) : 120-133. ScholarBank@NUS Repository. https://doi.org/10.1109/JETCAS.2016.2547698 21563357 21563365 https://scholarbank.nus.edu.sg/handle/10635/156166 en IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Science & Technology Technology Engineering, Electrical & Electronic Engineering Dual-pillar magnetic tunnel junction (MTJ) Landau-Lifshitz-Gilbert (LLG) readability scaling spin-orbit-torque magnetic tunnel junction (SOT-MTJ) spin transfer torque based magnetic memories (STT-MRAMs) writability SPIN-TRANSFER-TORQUE TUNNEL-JUNCTIONS MAGNETORESISTANCE
spellingShingle	Science & Technology Technology Engineering, Electrical & Electronic Engineering Dual-pillar magnetic tunnel junction (MTJ) Landau-Lifshitz-Gilbert (LLG) readability scaling spin-orbit-torque magnetic tunnel junction (SOT-MTJ) spin transfer torque based magnetic memories (STT-MRAMs) writability SPIN-TRANSFER-TORQUE TUNNEL-JUNCTIONS MAGNETORESISTANCE Jaiswal, Akhilesh Fong, Xuanyao Roy, Kaushik Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies
description	10.1109/JETCAS.2016.2547698
author2	DEPT OF ELECTRICAL & COMPUTER ENGG
author_facet	DEPT OF ELECTRICAL & COMPUTER ENGG Jaiswal, Akhilesh Fong, Xuanyao Roy, Kaushik
format	Article
author	Jaiswal, Akhilesh Fong, Xuanyao Roy, Kaushik
author_sort	Jaiswal, Akhilesh
title	Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies
title_short	Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies
title_full	Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies
title_fullStr	Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies
title_full_unstemmed	Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies
title_sort	comprehensive scaling analysis of current induced switching in magnetic memories based on in-plane and perpendicular anisotropies
publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
publishDate	2019
url	https://scholarbank.nus.edu.sg/handle/10635/156166
_version_	1778169135592636416

Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies

Similar Items