High-Density and Robust STT-MRAM Array Through Device/Circuit/Architecture Interactions
10.1109/TNANO.2015.2456510
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2019
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sg-nus-scholar.10635-1561782023-10-31T08:58:11Z High-Density and Robust STT-MRAM Array Through Device/Circuit/Architecture Interactions Kwon, Kon-Woo Fong, Xuanyao Wijesinghe, Parami Panda, Priyadarshini Roy, Kaushik DEPT OF ELECTRICAL & COMPUTER ENGG Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Engineering Science & Technology - Other Topics Materials Science Physics Cache density error correcting code invert coding magnetic tunnel junction (MTJ) process variation spin transfer torque magnetic random access memory (STT-MRAM) thermal stability factor yield SPIN TRANSFER ANISOTROPY MAGNETORESISTANCE INPLANE CACHE POWER RAM 10.1109/TNANO.2015.2456510 IEEE TRANSACTIONS ON NANOTECHNOLOGY 14 6 1024-1034 2019-07-03T03:24:51Z 2019-07-03T03:24:51Z 2015-11-01 2019-07-03T03:05:05Z Article Kwon, Kon-Woo, Fong, Xuanyao, Wijesinghe, Parami, Panda, Priyadarshini, Roy, Kaushik (2015-11-01). High-Density and Robust STT-MRAM Array Through Device/Circuit/Architecture Interactions. IEEE TRANSACTIONS ON NANOTECHNOLOGY 14 (6) : 1024-1034. ScholarBank@NUS Repository. https://doi.org/10.1109/TNANO.2015.2456510 1536-125X 1941-0085 https://scholarbank.nus.edu.sg/handle/10635/156178 en IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Elements |
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Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Engineering Science & Technology - Other Topics Materials Science Physics Cache density error correcting code invert coding magnetic tunnel junction (MTJ) process variation spin transfer torque magnetic random access memory (STT-MRAM) thermal stability factor yield SPIN TRANSFER ANISOTROPY MAGNETORESISTANCE INPLANE CACHE POWER RAM |
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Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Engineering Science & Technology - Other Topics Materials Science Physics Cache density error correcting code invert coding magnetic tunnel junction (MTJ) process variation spin transfer torque magnetic random access memory (STT-MRAM) thermal stability factor yield SPIN TRANSFER ANISOTROPY MAGNETORESISTANCE INPLANE CACHE POWER RAM Kwon, Kon-Woo Fong, Xuanyao Wijesinghe, Parami Panda, Priyadarshini Roy, Kaushik High-Density and Robust STT-MRAM Array Through Device/Circuit/Architecture Interactions |
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10.1109/TNANO.2015.2456510 |
author2 |
DEPT OF ELECTRICAL & COMPUTER ENGG |
author_facet |
DEPT OF ELECTRICAL & COMPUTER ENGG Kwon, Kon-Woo Fong, Xuanyao Wijesinghe, Parami Panda, Priyadarshini Roy, Kaushik |
format |
Article |
author |
Kwon, Kon-Woo Fong, Xuanyao Wijesinghe, Parami Panda, Priyadarshini Roy, Kaushik |
author_sort |
Kwon, Kon-Woo |
title |
High-Density and Robust STT-MRAM Array Through Device/Circuit/Architecture Interactions |
title_short |
High-Density and Robust STT-MRAM Array Through Device/Circuit/Architecture Interactions |
title_full |
High-Density and Robust STT-MRAM Array Through Device/Circuit/Architecture Interactions |
title_fullStr |
High-Density and Robust STT-MRAM Array Through Device/Circuit/Architecture Interactions |
title_full_unstemmed |
High-Density and Robust STT-MRAM Array Through Device/Circuit/Architecture Interactions |
title_sort |
high-density and robust stt-mram array through device/circuit/architecture interactions |
publisher |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
publishDate |
2019 |
url |
https://scholarbank.nus.edu.sg/handle/10635/156178 |
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1781791692038340608 |