High-Density and Robust STT-MRAM Array Through Device/Circuit/Architecture Interactions

• Main Authors: Kwon, Kon-Woo, Fong, Xuanyao, Wijesinghe, Parami, Panda, Priyadarshini, Roy, Kaushik
• Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
• Format: Article
• Language: English
• Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
• Subjects: Science & Technology; Technology; Physical Sciences; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Engineering; Science & Technology - Other Topics; Materials Science; Physics; Cache; density; error correcting code; invert coding; magnetic tunnel junction (MTJ); process variation; spin transfer torque magnetic random access memory (STT-MRAM); thermal stability factor; yield; SPIN TRANSFER; ANISOTROPY; MAGNETORESISTANCE; INPLANE; CACHE; POWER; RAM
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/156178
• Institution: National University of Singapore

10.1109/TNANO.2015.2456510