Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective

Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective

10.1109/JSEN.2011.2124453

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Bibliographic Details
Main Authors: Augustine, Charles, Mojumder, Niladri Narayan, Fong, Xuanyao, Choday, Harsha, Park, Sang Phill, Roy, Kaushik
Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
Format: Article
Language:English
Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:
Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Instruments & Instrumentation
Physics, Applied
Engineering
Physics
Low power
memory
MTJ
parametric process variations
scaling
spin-transfer torque
MAGNETIC TUNNEL-JUNCTIONS
DESIGN
Online Access:https://scholarbank.nus.edu.sg/handle/10635/156192
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Institution: National University of Singapore
Language: English

Internet

https://scholarbank.nus.edu.sg/handle/10635/156192

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