Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective

• Main Authors: Augustine, Charles, Mojumder, Niladri Narayan, Fong, Xuanyao, Choday, Harsha, Park, Sang Phill, Roy, Kaushik
• Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
• Format: Article
• Language: English
• Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
• Subjects: Science & Technology; Technology; Physical Sciences; Engineering, Electrical & Electronic; Instruments & Instrumentation; Physics, Applied; Engineering; Physics; Low power; memory; MTJ; parametric process variations; scaling; spin-transfer torque; MAGNETIC TUNNEL-JUNCTIONS; DESIGN
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/156192
• Institution: National University of Singapore

10.1109/JSEN.2011.2124453