Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective

Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective

10.1109/JSEN.2011.2124453

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Bibliographic Details
Main Authors:	Augustine, Charles, Mojumder, Niladri Narayan, Fong, Xuanyao, Choday, Harsha, Park, Sang Phill, Roy, Kaushik
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Instruments & Instrumentation Physics, Applied Engineering Physics Low power memory MTJ parametric process variations scaling spin-transfer torque MAGNETIC TUNNEL-JUNCTIONS DESIGN
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/156192
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Institution:	National University of Singapore
Language:	English

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Summary:	10.1109/JSEN.2011.2124453