Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective

10.1109/JSEN.2011.2124453

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Bibliographic Details
Main Authors: Augustine, Charles, Mojumder, Niladri Narayan, Fong, Xuanyao, Choday, Harsha, Park, Sang Phill, Roy, Kaushik
Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
Format: Article
Language:English
Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:
MTJ
Online Access:https://scholarbank.nus.edu.sg/handle/10635/156192
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Institution: National University of Singapore
Language: English
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spelling sg-nus-scholar.10635-1561922023-09-21T08:44:58Z Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective Augustine, Charles Mojumder, Niladri Narayan Fong, Xuanyao Choday, Harsha Park, Sang Phill Roy, Kaushik DEPT OF ELECTRICAL & COMPUTER ENGG Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Instruments & Instrumentation Physics, Applied Engineering Physics Low power memory MTJ parametric process variations scaling spin-transfer torque MAGNETIC TUNNEL-JUNCTIONS DESIGN 10.1109/JSEN.2011.2124453 IEEE SENSORS JOURNAL 12 4 756-766 2019-07-03T03:41:56Z 2019-07-03T03:41:56Z 2012-04-01 2019-07-03T03:30:11Z Article Augustine, Charles, Mojumder, Niladri Narayan, Fong, Xuanyao, Choday, Harsha, Park, Sang Phill, Roy, Kaushik (2012-04-01). Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective. IEEE SENSORS JOURNAL 12 (4) : 756-766. ScholarBank@NUS Repository. https://doi.org/10.1109/JSEN.2011.2124453 1530-437X 2379-9153 https://scholarbank.nus.edu.sg/handle/10635/156192 en IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Elements
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
language English
topic Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Instruments & Instrumentation
Physics, Applied
Engineering
Physics
Low power
memory
MTJ
parametric process variations
scaling
spin-transfer torque
MAGNETIC TUNNEL-JUNCTIONS
DESIGN
spellingShingle Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Instruments & Instrumentation
Physics, Applied
Engineering
Physics
Low power
memory
MTJ
parametric process variations
scaling
spin-transfer torque
MAGNETIC TUNNEL-JUNCTIONS
DESIGN
Augustine, Charles
Mojumder, Niladri Narayan
Fong, Xuanyao
Choday, Harsha
Park, Sang Phill
Roy, Kaushik
Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective
description 10.1109/JSEN.2011.2124453
author2 DEPT OF ELECTRICAL & COMPUTER ENGG
author_facet DEPT OF ELECTRICAL & COMPUTER ENGG
Augustine, Charles
Mojumder, Niladri Narayan
Fong, Xuanyao
Choday, Harsha
Park, Sang Phill
Roy, Kaushik
format Article
author Augustine, Charles
Mojumder, Niladri Narayan
Fong, Xuanyao
Choday, Harsha
Park, Sang Phill
Roy, Kaushik
author_sort Augustine, Charles
title Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective
title_short Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective
title_full Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective
title_fullStr Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective
title_full_unstemmed Spin-Transfer Torque MRAMs for Low Power Memories: Perspective and Prospective
title_sort spin-transfer torque mrams for low power memories: perspective and prospective
publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
publishDate 2019
url https://scholarbank.nus.edu.sg/handle/10635/156192
_version_ 1778169139479707648