Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy

Ph.D

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Bibliographic Details
Main Author:	TAN CHUNG FOONG
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2010
Subjects:	carbon, solid phase epitaxy (SPE), junction leakage, MOSFET, annealing, end of range (EOR)
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/16160
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-16160
record_format	dspace
spelling	sg-nus-scholar.10635-161602020-11-18T04:18:40Z Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy TAN CHUNG FOONG ELECTRICAL & COMPUTER ENGINEERING CHOR ENG FONG carbon, solid phase epitaxy (SPE), junction leakage, MOSFET, annealing, end of range (EOR) Ph.D DOCTOR OF PHILOSOPHY 2010-04-08T11:01:43Z 2010-04-08T11:01:43Z 2007-03-27 Thesis TAN CHUNG FOONG (2007-03-27). Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy. ScholarBank@NUS Repository. https://scholarbank.nus.edu.sg/handle/10635/16160 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	carbon, solid phase epitaxy (SPE), junction leakage, MOSFET, annealing, end of range (EOR)
spellingShingle	carbon, solid phase epitaxy (SPE), junction leakage, MOSFET, annealing, end of range (EOR) TAN CHUNG FOONG Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING TAN CHUNG FOONG
format	Theses and Dissertations
author	TAN CHUNG FOONG
author_sort	TAN CHUNG FOONG
title	Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy
title_short	Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy
title_full	Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy
title_fullStr	Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy
title_full_unstemmed	Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy
title_sort	carbon rich silicon (si1-ycy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy
publishDate	2010
url	https://scholarbank.nus.edu.sg/handle/10635/16160
_version_	1684664536466980864

Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy

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