A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas

10.7567/APEX.10.014101

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Main Authors: Hou, H, Liu, Z, Teng, J, Palacios, T, Chua, S.-J
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2020
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Online Access:https://scholarbank.nus.edu.sg/handle/10635/173810
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spelling sg-nus-scholar.10635-1738102024-04-17T03:20:23Z A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas Hou, H Liu, Z Teng, J Palacios, T Chua, S.-J ELECTRICAL AND COMPUTER ENGINEERING Electric fields Electron mobility Gallium nitride Nanoantennas Terahertz waves AlGaN/GaN high electron mobility transistors Broadband detectors Fabricated device Gan high electron mobility transistors Local electric field Noise equivalent power Si substrates Sub-terahertz High electron mobility transistors 10.7567/APEX.10.014101 Applied Physics Express 10 1 14101 2020-09-01T00:59:39Z 2020-09-01T00:59:39Z 2017 Article Hou, H, Liu, Z, Teng, J, Palacios, T, Chua, S.-J (2017). A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas. Applied Physics Express 10 (1) : 14101. ScholarBank@NUS Repository. https://doi.org/10.7567/APEX.10.014101 18820778 https://scholarbank.nus.edu.sg/handle/10635/173810 Unpaywall 20200831
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Electric fields
Electron mobility
Gallium nitride
Nanoantennas
Terahertz waves
AlGaN/GaN high electron mobility transistors
Broadband detectors
Fabricated device
Gan high electron mobility transistors
Local electric field
Noise equivalent power
Si substrates
Sub-terahertz
High electron mobility transistors
spellingShingle Electric fields
Electron mobility
Gallium nitride
Nanoantennas
Terahertz waves
AlGaN/GaN high electron mobility transistors
Broadband detectors
Fabricated device
Gan high electron mobility transistors
Local electric field
Noise equivalent power
Si substrates
Sub-terahertz
High electron mobility transistors
Hou, H
Liu, Z
Teng, J
Palacios, T
Chua, S.-J
A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas
description 10.7567/APEX.10.014101
author2 ELECTRICAL AND COMPUTER ENGINEERING
author_facet ELECTRICAL AND COMPUTER ENGINEERING
Hou, H
Liu, Z
Teng, J
Palacios, T
Chua, S.-J
format Article
author Hou, H
Liu, Z
Teng, J
Palacios, T
Chua, S.-J
author_sort Hou, H
title A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas
title_short A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas
title_full A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas
title_fullStr A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas
title_full_unstemmed A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas
title_sort sub-terahertz broadband detector based on a gan high-electron-mobility transistor with nanoantennas
publishDate 2020
url https://scholarbank.nus.edu.sg/handle/10635/173810
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