A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas

• Main Authors: Hou, H, Liu, Z, Teng, J, Palacios, T, Chua, S.-J
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Published: 2020
• Subjects: Electric fields; Electron mobility; Gallium nitride; Nanoantennas; Terahertz waves; AlGaN/GaN high electron mobility transistors; Broadband detectors; Fabricated device; Gan high electron mobility transistors; Local electric field; Noise equivalent power; Si substrates; Sub-terahertz; High electron mobility transistors
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/173810
• Institution: National University of Singapore

10.7567/APEX.10.014101