An Evolutionary Multilayer Perceptron-Based Large-Signal Model of GaN HEMTs Including Self-Heating and Trapping Effects

• المؤلفون الرئيسيون: Wenrui Hu, Guo Yongxin
• مؤلفون آخرون: Rudolph, Matthias
• التنسيق: مقال
• اللغة: English
• منشور في: Institute of Electrical and Electronics Engineers (IEEE) 2021
• الموضوعات: Artificial neural network; evolutionary multilayer perceptron; GaN high electron mobility transistors; large-signal modeling; self-heating effects; trapping effects
• الوصول للمادة أونلاين: https://scholarbank.nus.edu.sg/handle/10635/210316
• المؤسسة: National University of Singapore

10.1109/TMTT.2021.3132892