An Evolutionary Multilayer Perceptron-Based Large-Signal Model of GaN HEMTs Including Self-Heating and Trapping Effects

An Evolutionary Multilayer Perceptron-Based Large-Signal Model of GaN HEMTs Including Self-Heating and Trapping Effects

10.1109/TMTT.2021.3132892

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Wenrui Hu, Guo Yongxin
مؤلفون آخرون:	Rudolph, Matthias
التنسيق:	مقال
اللغة:	English
منشور في:	Institute of Electrical and Electronics Engineers (IEEE) 2021
الموضوعات:	Artificial neural network evolutionary multilayer perceptron GaN high electron mobility transistors large-signal modeling self-heating effects trapping effects
الوصول للمادة أونلاين:	https://scholarbank.nus.edu.sg/handle/10635/210316
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	National University of Singapore
اللغة:	English

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