An Evolutionary Multilayer Perceptron-Based Large-Signal Model of GaN HEMTs Including Self-Heating and Trapping Effects

• Main Authors: Wenrui Hu, Guo Yongxin
• Other Authors: Rudolph, Matthias
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers (IEEE) 2021
• Subjects: Artificial neural network; evolutionary multilayer perceptron; GaN high electron mobility transistors; large-signal modeling; self-heating effects; trapping effects
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/210316
• Institution: National University of Singapore

10.1109/TMTT.2021.3132892