High temperature terahertz detectors realized by a GaN high electron mobility transistor

High temperature terahertz detectors realized by a GaN high electron mobility transistor

10.1038/srep46664

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Bibliographic Details
Main Authors: Hou, H.W, Liu, Z, Teng, J.H, Palacios, T, Chua, S.J
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/173954
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Institution: National University of Singapore
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Summary:10.1038/srep46664

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