High temperature terahertz detectors realized by a GaN high electron mobility transistor

High temperature terahertz detectors realized by a GaN high electron mobility transistor

10.1038/srep46664

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Bibliographic Details
Main Authors:	Hou, H.W, Liu, Z, Teng, J.H, Palacios, T, Chua, S.J
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	2020
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/173954
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Institution:	National University of Singapore

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