Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature

Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature

10.1038/srep24920

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Bibliographic Details
Main Authors: Liu, X, Ang, K.-W, Yu, W, He, J, Feng, X, Liu, Q, Jiang, H, Tang, D, Wen, J, Lu, Y, Liu, W, Cao, P, Han, S, Wu, J, Wang, X, Zhu, D, He, Z
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/174015
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Institution: National University of Singapore
Description
Summary:10.1038/srep24920

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